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V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

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V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

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Brand Name : Vishay General Semiconductor

Model Number : V20PWM45-M3/I V20PWM45HM3/I

MOQ : 1 piece

Payment Terms : T/T

Delivery Time : 2~8 workdays

Brand : Vishay General Semiconductor

Certificate : /

Model : V20PWM45-M3/I V20PWM45HM3/I

MOQ : 1 pc

Price : Negotiated

Delivery : 2~8 workdays

Payment : T/T

Contact Now

Product Description

V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottk

V20PWM45 V20PWM45C-My Rectifier3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products


V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A
V20PWM45C High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A

APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications

FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization


Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features :
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea

Product Technical Specifications

Category
Discrete Semiconductor Products
 
Diodes - Rectifiers - Single
Mfr
Vishay General Semiconductor - Diodes Division
Series
Automotive, AEC-Q101, eSMP®, TMBS®
Package
Tape & Reel (TR)
Part Status
Active
Diode Type
Schottky
Voltage - DC Reverse (Vr) (Max)
45 V
Current - Average Rectified (Io)
20A
Voltage - Forward (Vf) (Max) @ If
660 mV @ 20 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
700 µA @ 45 V
Capacitance @ Vr, F
3100pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
SlimDPAK
Operating Temperature - Junction
-40°C ~ 175°C
Base Product Number
V20PWM45
Part number V20PWM45-M3/I V20PWM45HM3/I
Base part number V20PWM45C-M3/I
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95

Product Tags:

MOS Vishay Semiconductor

      

TMBS Vishay Semiconductor

      

V20PWM45

      
China V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier wholesale

V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier Images

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